| Unit Weight | 0.039133 oz | |
| Configuration | Single | |
| Id - Continuous Drain Current | 410 mA | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 24 V | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Product Status | Active | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | TO-39 | |
| Maximum IDSS (uA) | 10 | |
| Transistor Type | 1 N-Channel | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 10 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant | |
| Rds On - Drain-Source Resistance | 3 Ohms | |
| Maximum Continuous Drain Current (A) | 0.41 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 3000@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 410mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Vgs th - Gate-Source Threshold Voltage | 800 mV | |
| HTSUS | 8541.29.0095 | |
| Package | Bag | |
| USHTS | 8541290095 | |
| Typical Input Capacitance @ Vds (pF) | 50(Max)@24V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.29.95.00 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 6250 | |
| Qg - Gate Charge | - | |
| Supplier Device Package | TO-39 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 6.25W (Tc) | |
| Process Technology | DMOS | |
| Package Height | 6.6(Max) | |
| Mfr | Microchip Technology | |
| Vgs (Max) | ±20V | |
| Maximum Operating Temperature | + 150 C | |
| Diameter | 9.4(Max) | |
| RoHS Status | RoHS non-compliant | |
| Mounting Style | Through Hole | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Typical Turn-Off Delay Time | 10 ns | |
| Material | Si | |
| Transistor Polarity | N-Channel | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Series | - | |
| Type | FET | |
| Forward Transconductance - Min | 170 mS | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 2 | |
| Pd - Power Dissipation | 6.25 W | |
