2N6661 (In Stock:990)

Single FETs, MOSFETs
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2N6661 Description

N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39

Technical specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 24 V
ECCNEAR99
Mounting TypeThrough Hole
Product StatusActive
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-39
Drain to Source Voltage (Vdss)90 V
Series-
Power Dissipation (Max)6.25W (Tc)
Package / CaseTO-205AD, TO-39-3 Metal Can
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrMicrochip Technology
Current - Continuous Drain (Id) @ 25°C350mA (Tj)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
HTSUS8541.29.0095
PackageBag
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

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