NAND01GW3B2CN6E
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NAND01GW3B2CN6E
774-NAND01GW3B2CN6E
IC FLASH 1GBIT PARALLEL 48TSOP
NAND01GW3B2CN6E Description
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP
Technical specifications
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Memory Interface | Parallel | |
| ECCN | 3A991B1A | |
| Memory Organization | 128M x 8 | |
| Mounting Type | Surface Mount | |
| Memory Type | Non-Volatile | |
| Product Status | Obsolete | |
| Supplier Device Package | 48-TSOP | |
| Series | - | |
| Access Time | 25 ns | |
| Write Cycle Time - Word, Page | 25ns | |
| Memory Size | 1Gbit | |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) | |
| Technology | FLASH - NAND | |
| Voltage - Supply | 2.7V ~ 3.6V | |
| REACH Status | REACH Unaffected | |
| Mfr | Micron Technology Inc. | |
| HTSUS | 8542.32.0051 | |
| Package | Tray | |
| Memory Format | FLASH | |
| RoHS Status | ROHS3 Compliant | |
| Base Product Number | NAND01 | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
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