2N6770

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
2N6770
278-2N6770
MOSFET N-CH 500V 12A TO3

2N6770 Description

N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3

Technical specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Rds On (Max) @ Id, Vgs500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
Drain to Source Voltage (Vdss)500 V
Series-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Package / CaseTO-204AE
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrMicrosemi Corporation
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageBulk
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

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