| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 3.3 V | |
| Product Status | Active | |
| Supplier Device Package | DSN1010-3 | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Power Dissipation (Max) | 1.2W (Ta), 31W (Tc) | |
| Package / Case | 3-XDFN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Nexperia USA Inc. | |
| Vgs (Max) | ±8V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Series | TrenchMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) |
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