1N914B,113

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Description:
NXP Semiconductors
1N914B,113
280-1N914B,113
DIODE GEN PURP 100V 200MA ALF2

1N914B,113 Description

Technical specifications

SpeedSmall Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F4pF @ 0V, 1MHz
Reverse Recovery Time (trr)4 ns
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Supplier Device PackageALF2
Current - Reverse Leakage @ Vr5 µA @ 75 V
Series-
Package / CaseDO-204AH, DO-35, Axial
TechnologyStandard
REACH StatusREACH Unaffected
Voltage - Forward (Vf) (Max) @ If1 V @ 100 mA
MfrNXP USA Inc.
Voltage - DC Reverse (Vr) (Max)100 V
HTSUS8541.10.0070
PackageTape & Reel (TR)
Current - Average Rectified (Io)200mA
Operating Temperature - Junction175°C (Max)
RoHS StatusROHS3 Compliant
Base Product Number1N91
Moisture Sensitivity Level (MSL)1 (Unlimited)