BC639,112

Single Bipolar Transistors
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BC639,112 Description

Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 830 mW Through Hole TO-92-3

Technical specifications

Operating Temperature150°C (TJ)
Frequency - Transition180MHz
Current - Collector (Ic) (Max)1 A
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)80 V
Supplier Device PackageTO-92-3
Series-
Transistor TypeNPN
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max830 mW
REACH StatusREACH Unaffected
MfrNXP USA Inc.
Current - Collector Cutoff (Max)100nA (ICBO)
HTSUS8541.21.0075
PackageBulk
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Base Product NumberBC63
Moisture Sensitivity Level (MSL)1 (Unlimited)

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