| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 25 V | |
| Product Status | Obsolete | |
| Supplier Device Package | TO-92-3 | |
| Drain to Source Voltage (Vdss) | 300 V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | NXP USA Inc. | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 17Ohm @ 170mA, 10V | |
| Vgs(th) (Max) @ Id | 2.55V @ 1mA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | BSP3 | |
