BUK9E3R2-40E,127

Single FETs, MOSFETs
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BUK9E3R2-40E,127
278-BUK9E3R2-40E,127
MOSFET N-CH 40V 100A I2PAK

BUK9E3R2-40E,127 Description

N-Channel 40 V 100A (Tc) 234W (Tc) Through Hole I2PAK

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs69.5 nC @ 5 V
Product StatusObsolete
Supplier Device PackageI2PAK
Drain to Source Voltage (Vdss)40 V
Power Dissipation (Max)234W (Tc)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrNXP USA Inc.
Vgs (Max)±10V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
SeriesTrenchMOS™
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberBUK9

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