FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 9150 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 69.5 nC @ 5 V | |
Product Status | Obsolete | |
Supplier Device Package | I2PAK | |
Drain to Source Voltage (Vdss) | 40 V | |
Power Dissipation (Max) | 234W (Tc) | |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | NXP USA Inc. | |
Vgs (Max) | ±10V | |
RoHS Status | ROHS3 Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Mounting Type | Through Hole | |
Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 1mA | |
Series | TrenchMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
HTSUS | 8541.29.0095 | |
Package | Tube | |
Base Product Number | BUK9 |
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