| Operating Temperature | 150°C (TJ) | |
| FET Type | P-Channel | |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 10 nA | |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) | |
| ECCN | EAR99 | |
| Resistance - RDS(On) | 300 Ohms | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.5 mA @ 15 V | |
| Mounting Type | Through Hole | |
| Product Status | Obsolete | |
| Supplier Device Package | TO-92-3 | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Series | - | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Power - Max | 400 mW | |
| REACH Status | REACH Unaffected | |
| Mfr | NXP USA Inc. | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Box (TB) | |
| RoHS Status | ROHS3 Compliant | |
| Base Product Number | J177 | |
| Voltage - Breakdown (V(BR)GSS) | 30 V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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