PBSS5112PAP,115 (In Stock:34680)
Bipolar Transistor Arrays Manufacturer:
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PBSS5112PAP,115
277-PBSS5112PAP,115
NEXPERIA PBSS5112PAP - SMALL SIG
PBSS5112PAP,115 Description
Bipolar (BJT) Transistor Array 2 PNP 120V 1A 100MHz 510mW Surface Mount 6-HUSON (2x2)
Technical specifications
| Operating Temperature | 150°C (TJ) | |
| Frequency - Transition | 100MHz | |
| Current - Collector (Ic) (Max) | 1A | |
| Vce Saturation (Max) @ Ib, Ic | 480mV @ 100mA, 1A | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 120V | |
| Supplier Device Package | 6-HUSON (2x2) | |
| Series | - | |
| Qualification | AEC-Q101 | |
| Transistor Type | 2 PNP | |
| Package / Case | 6-UDFN Exposed Pad | |
| Power - Max | 510mW | |
| REACH Status | REACH Unaffected | |
| Mfr | NXP Semiconductors | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Package | Bulk | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 @ 100mA, 2V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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