PBSS5260QA147

Single Bipolar Transistors
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PBSS5260QA147
276-PBSS5260QA147
SMALL SIGNAL BIPOLAR TRANSISTOR

PBSS5260QA147 Description

Bipolar (BJT) Transistor PNP 60 V 1.7 A 150MHz 325 mW Surface Mount DFN1010D-3

Technical specifications

Operating Temperature150°C (TJ)
Frequency - Transition150MHz
Current - Collector (Ic) (Max)1.7 A
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A
ECCNEAR99
GradeAutomotive
Mounting TypeSurface Mount
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)60 V
Supplier Device PackageDFN1010D-3
Series-
QualificationAEC-Q101
Transistor TypePNP
Package / Case3-XDFN Exposed Pad
Power - Max325 mW
REACH StatusVendor Undefined
MfrNXP USA Inc.
Current - Collector Cutoff (Max)100nA (ICBO)
HTSUS8541.21.0075
PackageBulk
RoHS StatusNot applicable
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 2V
Moisture Sensitivity Level (MSL)1 (Unlimited)

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