| Frequency - Transition | 180 MHz | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA | |
| ECCN | EAR99 | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Supplier Device Package | DFN1010D-3 | |
| Series | PDTA143XQA | |
| Qualification | AEC-Q101 | |
| Transistor Type | PNP - Pre-Biased | |
| Package / Case | 3-XDFN Exposed Pad | |
| Power - Max | 280 mW | |
| REACH Status | Vendor Undefined | |
| Mfr | NXP USA Inc. | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Current - Collector Cutoff (Max) | 1µA | |
| HTSUS | 8541.21.0075 | |
| Package | Bulk | |
| RoHS Status | Not applicable | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
