PDTB123ES,126

Single, Pre-Biased Bipolar Transistors
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PDTB123ES,126
292-PDTB123ES,126
TRANS PREBIAS PNP 50V TO92-3

PDTB123ES,126 Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3

Technical specifications

Current - Collector (Ic) (Max)500 mA
Resistor - Base (R1)2.2 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)50 V
Supplier Device PackageTO-92-3
Series-
Transistor TypePNP - Pre-Biased
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max500 mW
REACH StatusREACH Unaffected
MfrNXP USA Inc.
Resistor - Emitter Base (R2)2.2 kOhms
Current - Collector Cutoff (Max)500nA
HTSUS8541.21.0095
PackageTape & Box (TB)
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 5V
Base Product NumberPDTB123
Moisture Sensitivity Level (MSL)1 (Unlimited)

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