PDTD113ZS,126
Single, Pre-Biased Bipolar Transistors Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
PDTD113ZS,126
292-PDTD113ZS,126
TRANS PREBIAS NPN 50V TO92-3
PDTD113ZS,126 Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3
Technical specifications
| Current - Collector (Ic) (Max) | 500 mA | |
| Resistor - Base (R1) | 1 kOhms | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Product Status | Obsolete | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Supplier Device Package | TO-92-3 | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Power - Max | 500 mW | |
| REACH Status | REACH Unaffected | |
| Mfr | NXP USA Inc. | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Current - Collector Cutoff (Max) | 500nA | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Box (TB) | |
| RoHS Status | ROHS3 Compliant | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V | |
| Base Product Number | PDTD113 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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