Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 4235 pF @ 12 V | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | |
Mounting Type | Surface Mount | |
Product Status | Active | |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 2.15V @ 1mA | |
Supplier Device Package | 8-SO | |
Drain to Source Voltage (Vdss) | 30 V | |
Series | TrenchMOS™ | |
Power Dissipation (Max) | 6.9W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | NXP Semiconductors | |
Current - Continuous Drain (Id) @ 25°C | 30.4A (Tc) | |
Vgs (Max) | ±20V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Package | Bulk | |
Moisture Sensitivity Level (MSL) | Vendor Undefined |
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