FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
Product Status | Active | |
Supplier Device Package | DFN2020MD-6 | |
Drain to Source Voltage (Vdss) | 60 V | |
Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) | |
Package / Case | 6-UDFN Exposed Pad | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | Vendor Undefined | |
Mfr | NXP USA Inc. | |
Vgs (Max) | ±20V | |
RoHS Status | Not applicable | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Rds On (Max) @ Id, Vgs | 43mOhm @ 4.8A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
HTSUS | 8541.29.0095 | |
Package | Bulk |
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