Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
FET Type | P-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 116 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Product Status | Active | |
Rds On (Max) @ Id, Vgs | 447mOhm @ 1.2A, 4.5V | |
Vgs(th) (Max) @ Id | 950mV @ 250µA | |
Supplier Device Package | DFN1010D-3 | |
Drain to Source Voltage (Vdss) | 20 V | |
Series | - | |
Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) | |
Package / Case | 3-XDFN Exposed Pad | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | NXP Semiconductors | |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) | |
Vgs (Max) | ±8V | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
HTSUS | 8541.21.0095 | |
Package | Bulk | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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