PSMN040-200W,127

Single FETs, MOSFETs
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Description:
PSMN040-200W,127
278-PSMN040-200W,127
MOSFET N-CH 200V 50A TO247-3

PSMN040-200W,127 Description

N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds9530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs183 nC @ 10 V
Product StatusObsolete
Supplier Device PackageTO-247
Drain to Source Voltage (Vdss)200 V
Power Dissipation (Max)300W (Tc)
Package / CaseTO-247-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrNXP USA Inc.
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs40mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
SeriesTrenchMOS™
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberPSMN0

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