FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 12 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
Product Status | Active | |
Supplier Device Package | LFPAK56, Power-SO8 | |
Drain to Source Voltage (Vdss) | 25 V | |
Power Dissipation (Max) | 43W (Ta) | |
Package / Case | SC-100, SOT-669 | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | Vendor Undefined | |
Mfr | NXP USA Inc. | |
Vgs (Max) | ±20V | |
RoHS Status | Not applicable | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Feature | Schottky Diode (Body) | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Rds On (Max) @ Id, Vgs | 6.75mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 1mA | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 61A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
HTSUS | 8541.29.0095 | |
Package | Bulk |
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