| Unit Weight | 0.000282 oz | |
| Configuration | Single | |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V | |
| Product | MOSFET Small Signals | |
| PPAP | No | |
| Fall Time | 29 ns | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Maximum IDSS (uA) | 1 | |
| Typical Turn-On Delay Time | 12.2 ns | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| Maximum Continuous Drain Current (A) | 0.38 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 5 | |
| Maximum Drain Source Voltage (V) | 60 | |
| Standard Package Name | SOT | |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V | |
| Mounting | Surface Mount | |
| Rise Time | 9 ns | |
| Typical Gate to Drain Charge (nC) | 0.1 | |
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| Package | Tape & Reel (TR) | |
| Qg - Gate Charge | 700 pC | |
| Power Dissipation (Max) | 300mW (Ta) | |
| Process Technology | PowerTrench | |
| Package Height | 0.94 | |
| Typical Gate to Source Charge (nC) | 0.3 | |
| Vgs (Max) | ±20V | |
| Maximum Operating Temperature | + 150 C | |
| Width | 1.3 mm | |
| RoHS Status | ROHS3 Compliant | |
| Transistor Polarity | N-Channel | |
| Typical Gate Charge @ 10V (nC) | 0.7 | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Diode Forward Voltage (V) | 1.2 | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Typical Diode Forward Voltage (V) | 0.8 | |
| Typical Output Capacitance (pF) | 4.2 | |
| Length | 2.9 mm | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 2.3 | |
| Package Width | 1.3 | |
| Typical Turn-Off Delay Time (ns) | 55.8 | |
| Id - Continuous Drain Current | 380 mA | |
| Maximum Gate Source Leakage Current (nA) | 10000 | |
| Typical Rise Time (ns) | 9 | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 12.2 | |
| Product Status | Active | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | SOT-23 | |
| Transistor Type | 1 N-Channel | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Channels | 1 Channel | |
| Technology | MOSFET (Metal Oxide) | |
| EU RoHS | Compliant | |
| Rds On - Drain-Source Resistance | 1.6 Ohms | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Resistance (mOhm) | 1600@10V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
| Pin Count | 3 | |
| Minimum Gate Threshold Voltage (V) | 1 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.2@20V | |
| Lead Shape | Gull-wing | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| HTSUS | 8541.21.0095 | |
| USHTS | 8541210095 | |
| Typical Gate Charge @ Vgs (nC) | [email protected] | |
| Typical Input Capacitance @ Vds (pF) | 24.5@20V | |
| Category | Small Signal | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 420 | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Typical Fall Time (ns) | 29 | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Mfr | onsemi | |
| Height | 0.94 mm | |
| Mounting Style | SMD/SMT | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Typical Turn-Off Delay Time | 55.8 ns | |
| Package Length | 2.9 | |
| Series | 2N7002K | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Forward Transconductance - Min | 530 mS | |
| Pd - Power Dissipation | 420 mW | |
| Base Product Number | 2N7002 | |
