BD679

Single Bipolar Transistors
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
BD679
276-BD679
TRANS NPN DARL 80V 4A TO126

BD679 Description

### BD679 Description The BD679 is a high-performance NPN bipolar transistor designed and manufactured by onsemi. It is a single Bipolar Transistor with a TO126 package, offering excellent electrical characteristics and reliability. The BD679 is characterized by its high current handling capability of up to 4 A (Ic) and a maximum collector-emitter breakdown voltage of 80 V. With a maximum power dissipation of 40 W, this transistor is suitable for various high-power applications. ### BD679 Features - **High Current Handling**: The BD679 can handle up to 4 A of collector current, making it ideal for high-current applications. - **Low Saturation Voltage**: The BD679 has a low Vce saturation voltage of 2.5 V at 30 mA and 1.5 A, ensuring efficient operation in low-voltage circuits. - **High DC Current Gain**: With a minimum hFE of 750 at 1.5 A and 3 V, the BD679 provides excellent amplification capabilities. - **High Breakdown Voltage**: The BD679 can withstand up to 80 V of collector-emitter breakdown voltage, making it suitable for high-voltage applications. - **Through-Hole Mounting**: The BD679 features a through-hole mounting type, providing a secure and reliable connection in various circuit designs. - **Low Moisture Sensitivity**: With a moisture sensitivity level of 1 (unlimited), the BD679 can be used in various environments without concerns about moisture-related issues. ### BD679 Applications The BD679 is an ideal choice for various high-power and high-voltage applications, including: 1. **Power Amplifiers**: Due to its high current handling and low saturation voltage, the BD679 is suitable for use in power amplifiers. 2. **Switching Regulators**: The BD679's high breakdown voltage and low saturation voltage make it an excellent choice for switching regulator applications. 3. **Motor Control**: The BD679's high current handling capability and high breakdown voltage make it suitable for motor control applications. 4. **High-Voltage Signal Amplification**: The BD679's high breakdown voltage and high DC current gain make it ideal for high-voltage signal amplification applications. ### Conclusion of BD679 The BD679 is a high-performance NPN bipolar transistor that offers excellent electrical characteristics and reliability. Its high current handling capability, low saturation voltage, and high breakdown voltage make it an ideal choice for various high-power and high-voltage applications. However, it is important to note that the BD679 is now considered obsolete. Despite this, its unique features and advantages make it a valuable component in legacy systems and applications where high performance and reliability are critical.

Technical specifications

Operating Temperature-55°C ~ 150°C (TJ)
Frequency - Transition-
Current - Collector (Ic) (Max)4 A
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)80 V
Supplier Device PackageTO-126
Series-
Transistor TypeNPN - Darlington
Package / CaseTO-225AA, TO-126-3
Power - Max40 W
REACH StatusREACH Unaffected
Mfronsemi
Current - Collector Cutoff (Max)500µA
HTSUS8541.29.0095
PackageBulk
RoHS StatusRoHS non-compliant
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Base Product NumberBD679
Moisture Sensitivity Level (MSL)1 (Unlimited)

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