BS170 (In Stock:18892)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
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Description:
BS170
278-BS170
MOSFET N-CH 60V 500MA TO92-3
1+:$0.20174
10+:$0.16425
100+:$0.14818
InStock Quantity: 18892

BS170 Description

BS170 N-Channel MOSFET Overview

The BS170 is a widely used N-Channel MOSFET designed for low-power switching applications. Manufactured by onsemi, it features high reliability, low RDS(on), and convenient through-hole mounting in a TO-92 package. It’s ideal for educational, prototyping, and commercial-grade electronic designs.

BS170

BS170 Datasheet Download

You can download the official BS170 datasheet from onsemi’s website or trusted distributors. It includes electrical characteristics, thermal data, and test circuits.

Features of BS170

  • N-Channel enhancement mode MOSFET
  • Low RDS(on): 5 Ohms at 200mA, 10V
  • Continuous Drain Current: 500mA
  • Drain-Source Voltage: 60V
  • Gate-Source Voltage: ±20V max
  • Low input capacitance: 40pF
  • Power Dissipation: 830mW (max)
  • Operating temperature range: -55°C to +150°C
  • TO-92 through-hole package

BS170 Specifications

Parameter Value
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
VDS (Max) 60 V
ID (Continuous) 500mA @ 25°C
RDS(on) 5 Ohms @ 200mA, 10V
VGS(th) 3V @ 1mA
VGS(max) ±20V
Input Capacitance 40 pF @ 10V
Package TO-92-3 (TO-226AA)
Mounting Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Part Status Active

Typical Applications

  • Signal switching circuits
  • Load driving for LEDs and relays
  • Small motor drivers
  • Arduino and Raspberry Pi interfacing
  • Prototyping and educational electronics

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Frequently Asked Questions (FAQ)

Q1: Can BS170 be used with 3.3V logic?

A1: It is not ideal. The BS170 typically needs 5V–10V at the gate to fully turn on. Use logic-level MOSFETs for 3.3V systems.

Q2: What are common alternatives to BS170?

A2: Popular equivalents include 2N7000 and IRLZ44N (if higher current is required).

Q3: Is BS170 suitable for PWM applications?

A3: Yes, it can handle low-frequency PWM but may not perform well at high-speed switching due to its RDS(on) and gate charge.

Conclusion

The BS170 remains a reliable and easy-to-use N-Channel MOSFET for low-power and prototyping needs. With straightforward specs, solid performance, and wide availability, it is a go-to component for makers, engineers, and educators. Choose trusted distributors like Onzuu to ensure component authenticity and consistent supply.


Technical specifications

ConfigurationSingle
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
PPAPNo
Channel ModeEnhancement
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)60 V
Supplier PackageTO-92
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant
Maximum Continuous Drain Current (A)0.5
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)60
Maximum Drain Source Resistance (mOhm)5000@10V
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.21.0095
PackageBulk
Typical Input Capacitance @ Vds (pF)60(Max)@10V
CategorySmall Signal
PCB changed3
HTSCOMPONENTS
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)830
Supplier Device PackageTO-92-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)830mW (Ta)
Process TechnologyDMOS
Package Height5.33(Max)
Mfronsemi
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±20
Package Length5.2(Max)
Series-
Part StatusActive
Package Width4.19(Max)
Base Product NumberBS170

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