The BS170 is a widely used N-Channel MOSFET designed for low-power switching applications. Manufactured by onsemi, it features high reliability, low RDS(on), and convenient through-hole mounting in a TO-92 package. It’s ideal for educational, prototyping, and commercial-grade electronic designs.

You can download the official BS170 datasheet from onsemi’s website or trusted distributors. It includes electrical characteristics, thermal data, and test circuits.
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| VDS (Max) | 60 V |
| ID (Continuous) | 500mA @ 25°C |
| RDS(on) | 5 Ohms @ 200mA, 10V |
| VGS(th) | 3V @ 1mA |
| VGS(max) | ±20V |
| Input Capacitance | 40 pF @ 10V |
| Package | TO-92-3 (TO-226AA) |
| Mounting | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Part Status | Active |
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A1: It is not ideal. The BS170 typically needs 5V–10V at the gate to fully turn on. Use logic-level MOSFETs for 3.3V systems.
A2: Popular equivalents include 2N7000 and IRLZ44N (if higher current is required).
A3: Yes, it can handle low-frequency PWM but may not perform well at high-speed switching due to its RDS(on) and gate charge.
The BS170 remains a reliable and easy-to-use N-Channel MOSFET for low-power and prototyping needs. With straightforward specs, solid performance, and wide availability, it is a go-to component for makers, engineers, and educators. Choose trusted distributors like Onzuu to ensure component authenticity and consistent supply.
| Configuration | Single | |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | TO-92 | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant | |
| Maximum Continuous Drain Current (A) | 0.5 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 5000@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.21.0095 | |
| Package | Bulk | |
| Typical Input Capacitance @ Vds (pF) | 60(Max)@10V | |
| Category | Small Signal | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 830 | |
| Supplier Device Package | TO-92-3 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 830mW (Ta) | |
| Process Technology | DMOS | |
| Package Height | 5.33(Max) | |
| Mfr | onsemi | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Package Length | 5.2(Max) | |
| Series | - | |
| Part Status | Active | |
| Package Width | 4.19(Max) | |
| Base Product Number | BS170 |
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