FDA24N40F (In Stock:448)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FDA24N40F
278-FDA24N40F
MOSFET N-CH 400V 23A TO3PN
1+:$3.91147
10+:$3.37493
30+:$3.05532
100+:$2.73406
450+:$2.58502
InStock Quantity: 448

FDA24N40F Description

### FDA24N40F Description The FDA24N40F is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 23A at 25°C, this device is well-suited for demanding power electronics applications. The FDA24N40F features a low Rds(on) of 190mOhm at 11.5A and 10V Vgs, ensuring minimal power loss during operation. ### FDA24N40F Features - **High Drain-to-Source Voltage (Vdss):** 400V, making it suitable for high-voltage applications. - **Low Rds(on):** 190mOhm at 11.5A and 10V Vgs, reducing power loss and improving efficiency. - **Continuous Drain Current (Id):** 23A at 25°C, providing robust current handling capabilities. - **Gate Charge (Qg):** 60nC at 10V Vgs, enabling fast switching and reduced switching losses. - **Input Capacitance (Ciss):** 3030pF at 25V Vds, minimizing input capacitance for improved high-frequency performance. - **Mounting Type:** Through Hole, providing a reliable mechanical connection in various circuit designs. - **Package:** Tube, offering a compact and convenient packaging option for easy handling and storage. ### FDA24N40F Applications The FDA24N40F is ideal for a wide range of applications, including: 1. **Power Supplies:** Its high Vdss and low Rds(on) make it suitable for high-voltage power supply designs. 2. **Motor Controls:** The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications. 3. **Industrial Automation:** The FDA24N40F's robust performance characteristics make it well-suited for industrial automation systems requiring high power and efficient switching. 4. **Automotive Applications:** The device's high voltage and current ratings make it suitable for various automotive electronics, such as electric vehicle chargers and power management systems. ### Conclusion of FDA24N40F The FDA24N40F from onsemi is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low Rds(on), and fast switching capabilities. Its unique features and advantages make it an ideal choice for a variety of high-performance power electronics applications, including power supplies, motor controls, industrial automation, and automotive systems. With its robust performance and versatile packaging options, the FDA24N40F is a reliable and efficient solution for demanding power management tasks.

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)120
Input Capacitance (Ciss) (Max) @ Vds3030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Typical Rise Time (ns)92
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)40
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)400 V
Supplier PackageTO-3P
Package / CaseTO-3P-3, SC-65-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)23
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)400
Maximum Drain Source Resistance (mOhm)190@10V
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs190mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C23A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Typical Gate Charge @ Vgs (nC)46@10V
Typical Input Capacitance @ Vds (pF)2280@25V
CategoryPower MOSFET
PCB changed3
HTS8541.29.00.95
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)235000
Supplier Device PackageTO-3PN
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)235W (Tc)
Typical Fall Time (ns)75
Process TechnologyUniFET
Package Height18.9(Max)
Mfronsemi
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±30
Package Length16.2(Max)
Typical Gate Charge @ 10V (nC)46
SeriesUniFET™
TabTab
Part StatusActive
Package Width5(Max)
Base Product NumberFDA24

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