FDA59N30
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FDA59N30 Description
The FDA59N30 is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.
### Description:
The FDA59N30 is a high voltage N-channel MOSFET with a continuous drain current rating of 59A and a drain-to-source voltage (Vds) of 30V. It features a low on-state resistance (Rds(on)) of 0.055 ohms maximum at a gate-to-source voltage (Vgs) of 10V, which helps to minimize power dissipation and improve efficiency in power electronic applications.
### Features:
- High voltage N-channel MOSFET
- Continuous drain current rating of 59A
- Drain-to-source voltage (Vds) of 30V
- Low on-state resistance (Rds(on)) of 0.055 ohms maximum at Vgs of 10V
- High switching speed and low switching losses
- Low gate charge for faster switching times
- Robust design for improved reliability and durability
### Applications:
The FDA59N30 is suitable for use in a variety of power electronic applications, including:
- Motor control for industrial and automotive applications
- Power supplies for computing and telecommunications equipment
- Energy management systems for renewable energy and smart grid applications
- Battery management systems for electric and hybrid vehicles
- Inverters and converters for industrial and commercial power management
- Servo and robotic control systems
Overall, the FDA59N30 is a high performance MOSFET that offers excellent electrical characteristics and robust design, making it an ideal choice for a wide range of power electronic applications.
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 120 | |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
| Typical Rise Time (ns) | 575 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 140 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 300 V | |
| Supplier Package | TO-3P | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 59 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 300 | |
| Maximum Drain Source Resistance (mOhm) | 56@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 29.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 77@10V | |
| Typical Input Capacitance @ Vds (pF) | 3590@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.29.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 500000 | |
| Supplier Device Package | TO-3PN | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 500W (Tc) | |
| Typical Fall Time (ns) | 200 | |
| Process Technology | UniFET | |
| Package Height | 18.9(Max) | |
| Mfr | onsemi | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Package Length | 16.2(Max) | |
| Typical Gate Charge @ 10V (nC) | 77 | |
| Series | UniFET™ | |
| Tab | Tab | |
| Part Status | Active | |
| Package Width | 5(Max) | |
| Base Product Number | FDA59 |
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