FDD3672 (In Stock:4500)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
1+:$1.62619
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FDD3672 Description
The FDD3672 is a high-voltage, high-power, integrated MOSFET driver from ON Semiconductor. It is designed to drive N-channel MOSFETs in power conversion applications such as motor control, power supplies, and renewable energy systems.
### Description:
The FDD3672 is a monolithic integrated circuit that provides a high-voltage drive for N-channel MOSFETs. It features a high-voltage input and a low-voltage output, making it suitable for use in a wide range of power conversion applications. The device is available in a compact SOIC-8 package, which makes it easy to integrate into a variety of systems.
### Features:
- High-voltage input and low-voltage output
- Integrated MOSFET driver for N-channel MOSFETs
- Wide input voltage range (4.75V to 28V)
- Short-circuit and overcurrent protection
- Thermal shutdown protection
- Small package size (SOIC-8)
### Applications:
- Motor control
- Power supplies
- Renewable energy systems
- Battery management systems
- Inverters
- UPS systems
- Servo drives
The FDD3672 is a versatile MOSFET driver that is well-suited for a wide range of power conversion applications. Its high-voltage input and low-voltage output make it easy to integrate into a variety of systems, and its built-in protection features help to ensure reliable operation in demanding environments.
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 26 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
| Typical Rise Time (ns) | 59 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 11 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Supplier Package | DPAK | |
| Maximum IDSS (uA) | 1 | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 6.5 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Drain Source Resistance (mOhm) | 28@10V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Standard Package Name | TO-252 | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 44A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Surface Mount | |
| Lead Shape | Gull-wing | |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta), 44A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Typical Gate Charge @ Vgs (nC) | 24@10V | |
| Typical Input Capacitance @ Vds (pF) | 1710@25V | |
| Category | Power MOSFET | |
| PCB changed | 2 | |
| HTS | COMPONENTS | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 135000 | |
| Supplier Device Package | TO-252AA | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Power Dissipation (Max) | 135W (Tc) | |
| Typical Fall Time (ns) | 44 | |
| Process Technology | TMOS | |
| Package Height | 2.29 | |
| Mfr | onsemi | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| SVHC Exceeds Threshold | Yes | |
| Package Length | 6.54 | |
| Typical Gate Charge @ 10V (nC) | 24 | |
| Series | UltraFET™ | |
| Tab | Tab | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Package Width | 6.1 | |
| Base Product Number | FDD367 |
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