FDL100N50F (In Stock:700)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FDL100N50F
278-FDL100N50F
MOSFET N-CH 500V 100A TO264-3
1+:$18.22000
10+:$14.74720
100+:$13.87980
1000+:$12.57860
InStock Quantity: 700

FDL100N50F Description

N-Channel 500 V 100A (Tc) 2500W (Tc) Through Hole TO-264-3

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)202
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs238 nC @ 10 V
Typical Rise Time (ns)186
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)63
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)500 V
Supplier PackageTO-264AA
Package / CaseTO-264-3, TO-264AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant
Maximum Continuous Drain Current (A)100
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)500
Maximum Drain Source Resistance (mOhm)55@10V
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs55mOhm @ 50A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Pin Count3
MountingThrough Hole
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Typical Gate Charge @ Vgs (nC)238@10V
Typical Input Capacitance @ Vds (pF)12000@25V
CategoryPower MOSFET
PCB changed3
HTSCOMPONENTS
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)2500000
Supplier Device PackageTO-264-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)2500W (Tc)
Typical Fall Time (ns)105
Process TechnologyUniFET
Package Height26.4(Max)
Mfronsemi
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±30
Package Length20.2(Max)
Typical Gate Charge @ 10V (nC)238
SeriesUniFET™
TabTab
Part StatusActive
Package Width5.2(Max)
Base Product NumberFDL100

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