FDP18N50 (In Stock:10979)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
1+:$2.85660
10+:$2.47075
50+:$2.07000
100+:$1.82326
500+:$1.71065
1000+:$1.66262
FDP18N50 Description
### FDP18N50 Description
The FDP18N50 is a high-performance N-Channel MOSFET from onsemi, designed for a wide range of applications in the electronics industry. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A at 25°C, this device offers excellent electrical characteristics for demanding power management tasks. The FDP18N50 features a low on-resistance (Rds On) of 265mOhm at 9A and 10V, ensuring efficient power dissipation and reduced power losses.
### FDP18N50 Features
- **High Voltage Rating**: The FDP18N50 boasts a drain-to-source voltage (Vdss) of 500V, making it suitable for high-voltage applications.
- **Low On-Resistance**: With an Rds On of 265mOhm at 9A and 10V, the FDP18N50 minimizes power losses and improves efficiency.
- **Robust Current Handling**: Capable of handling continuous drain currents up to 18A at 25°C, this MOSFET is ideal for applications requiring high current management.
- **Low Gate Charge**: The FDP18N50 has a maximum gate charge (Qg) of 60nC at 10V, reducing switching losses and improving overall efficiency.
- **Wide Operating Voltage Range**: The device can operate with a gate-source voltage (Vgs) ranging from -30V to +30V, providing flexibility in various applications.
- **Compliance**: The FDP18N50 is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with environmental and trade regulations.
### FDP18N50 Applications
The FDP18N50 is an excellent choice for a variety of applications where high voltage, low on-resistance, and robust current handling are required. Some specific use cases include:
1. **Power Supplies**: The FDP18N50's high voltage rating and low on-resistance make it ideal for power supply designs, where efficient power management is crucial.
2. **Motor Control**: This MOSFET's ability to handle high currents and voltages makes it suitable for motor control applications, where precise current and voltage regulation is necessary.
3. **Industrial Automation**: The FDP18N50's robust performance characteristics make it a reliable choice for industrial automation systems, where high voltage and current handling are required.
4. **Automotive Applications**: The device's high voltage and current capabilities make it suitable for automotive applications, such as electric vehicle charging systems and power management.
### Conclusion of FDP18N50
The FDP18N50 from onsemi is a high-performance N-Channel MOSFET that offers a combination of high voltage, low on-resistance, and robust current handling capabilities. Its unique features, such as low gate charge and wide operating voltage range, make it an ideal choice for a variety of applications in the electronics industry. With its compliance with environmental and trade regulations, the FDP18N50 is a reliable and efficient solution for power management tasks in various applications.
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 95 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
| Typical Rise Time (ns) | 165 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 55 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Supplier Package | TO-220 | |
| Maximum IDSS (uA) | 1 | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 18 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 500 | |
| Maximum Drain Source Resistance (mOhm) | 265@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 265mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 45@10V | |
| Typical Input Capacitance @ Vds (pF) | 2200@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.29.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 235000 | |
| Supplier Device Package | TO-220-3 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 235W (Tc) | |
| Typical Fall Time (ns) | 90 | |
| Process Technology | UniFET | |
| Package Height | 9.4(Max) | |
| Mfr | onsemi | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Package Length | 10.67(Max) | |
| Typical Gate Charge @ 10V (nC) | 45 | |
| Series | UniFET™ | |
| Tab | Tab | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 5 | |
| Package Width | 4.7(Max) | |
| Base Product Number | FDP18 |
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