FDPF18N50T (In Stock:640)

Single FETs, MOSFETs
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onzuu Part #:
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FDPF18N50T
278-FDPF18N50T
MOSFET N-CH 500V 18A TO220F
1+:$3.53405
10+:$3.10121
100+:$2.84416
InStock Quantity: 640

FDPF18N50T Description

### FDPF18N50T Description The FDPF18N50T is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A at 25°C, this device is well-suited for power electronics applications. The FDPF18N50T features a low on-resistance (Rds On) of 265mOhm at 9A and 10V, ensuring efficient power dissipation and minimal power loss. ### FDPF18N50T Features - **High Voltage and Current Handling**: The FDPF18N50T can handle a drain-to-source voltage of up to 500V and a continuous drain current of 18A at 25°C, making it ideal for high-power applications. - **Low On-Resistance**: With an Rds On of 265mOhm at 9A and 10V, the FDPF18N50T offers efficient power dissipation and minimal power loss. - **High Input Capacitance**: The device has a maximum input capacitance (Ciss) of 2860 pF at 25V, ensuring fast switching speeds and reduced switching losses. - **Low Gate Charge**: The maximum gate charge (Qg) is 60 nC at 10V, contributing to lower power consumption and faster switching times. - **Robust Package**: The FDPF18N50T is available in a TO220F through-hole package, providing excellent thermal performance and ease of mounting. - **Compliance and Certifications**: This device is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with international regulations. ### FDPF18N50T Applications The FDPF18N50T is an excellent choice for a variety of power electronics applications, including: - **Power Supplies**: The high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). - **Motor Control**: The FDPF18N50T can be used in motor control applications, such as electric vehicle (EV) motor drives and industrial motor control systems. - **Industrial Automation**: This MOSFET is well-suited for use in industrial automation equipment, such as robotic arms and conveyor systems, where high power and fast switching are required. - **Renewable Energy**: The FDPF18N50T can be used in renewable energy applications, such as solar inverters and wind turbine power conversion systems. ### Conclusion of FDPF18N50T The FDPF18N50T from onsemi is a versatile and high-performance N-Channel MOSFET, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its robust package and compliance with international regulations make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, industrial automation, and renewable energy systems. With its unique features and advantages over similar models, the FDPF18N50T is a reliable and efficient solution for demanding power electronics applications.

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)95
Maximum Gate Source Leakage Current (nA)100
Input Capacitance (Ciss) (Max) @ Vds2860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Typical Rise Time (ns)165
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)55
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)500 V
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Package / CaseTO-220-3 Full Pack
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)18
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)500
Maximum Drain Source Resistance (mOhm)265@10V
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C18A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Typical Gate Charge @ Vgs (nC)45@10V
Typical Input Capacitance @ Vds (pF)2200@25V
CategoryPower MOSFET
PCB changed3
HTSFDPF18N50T
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)38500
Supplier Device PackageTO-220F-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)38.5W (Tc)
Typical Fall Time (ns)90
Process TechnologyUniFET
Package Height15.87
Mfronsemi
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±30
SVHC Exceeds ThresholdYes
Package Length10.16
Typical Gate Charge @ 10V (nC)45
SeriesUniFET™
TabTab
Part StatusActive
Maximum Gate Threshold Voltage (V)5
Package Width4.7
Base Product NumberFDPF18

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