FDS6690AS

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FDS6690AS
278-FDS6690AS
MOSFET N-CH 30V 10A 8SOIC

FDS6690AS Description

N-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Technical specifications

ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)25
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Typical Rise Time (ns)5
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)8
Product StatusObsolete
AutomotiveNo
Drain to Source Voltage (Vdss)30 V
Supplier PackageSOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant
Maximum Continuous Drain Current (A)10
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)30
Maximum Drain Source Resistance (mOhm)12@10V
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSO
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Pin Count8
MountingSurface Mount
Lead ShapeGull-wing
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Typical Gate Charge @ Vgs (nC)16@10V
Typical Input Capacitance @ Vds (pF)910@15V
CategoryPower MOSFET
PCB changed8
HTSCOMPONENTS
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)2500
Supplier Device Package8-SOIC
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)2.5W (Ta)
Typical Fall Time (ns)6
Process TechnologyTMOS
Package Height1.5(Max)
Mfronsemi
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±20
Package Length4.9
Typical Gate Charge @ 10V (nC)16
SeriesPowerTrench®, SyncFET™
Part StatusObsolete
Package Width3.9
Base Product NumberFDS6690

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