FDS9926A (In Stock:5898)

FET, MOSFET Arrays
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FDS9926A
289-FDS9926A
MOSFET 2N-CH 20V 6.5A 8SOIC
1+:$0.26310
10+:$0.24925
100+:$0.23078
1000+:$0.22850
InStock Quantity: 5898

FDS9926A Description

The FDS9926A is a high voltage, high current, N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and battery charging. ### Description: The FDS9926A is a power MOSFET with a drain-source voltage (VDS) rating of -100V and a continuous drain current (ID) rating of 42A. It features a logic level gate drive input and is available in a PowerPAK SO-8 package. ### Features: - High voltage, high current capability - Logic level gate drive input - Low on-state resistance (RDS(on)) - Avalanche energy capable - Available in PowerPAK SO-8 package ### Applications: - Motor control - Power supplies - Battery charging - Inverters - DC-DC converters - High voltage switch mode power supplies (SMPS) The FDS9926A is a versatile power MOSFET that is well-suited for use in a variety of power conversion applications. Its high voltage and current ratings, along with its low on-state resistance, make it an excellent choice for applications that require efficient power conversion and control.

Technical specifications

Configuration2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)15
Maximum Gate Source Leakage Current (nA)100
Input Capacitance (Ciss) (Max) @ Vds650pF @ 10V
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Typical Rise Time (ns)9
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)8
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)20V
Supplier PackageSOIC
Maximum IDSS (uA)1
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant
Maximum Continuous Drain Current (A)6.5
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Pulsed Drain Current @ TC=25°C (A)20
Maximum Drain Source Voltage (V)20
Maximum Drain Source Resistance (mOhm)[email protected]
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSO
Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Typical Reverse Recovery Charge (nC)5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)6.5
Pin Count8
MountingSurface Mount
Minimum Gate Threshold Voltage (V)0.6
Typical Reverse Transfer Capacitance @ Vds (pF)85@10V
Lead ShapeGull-wing
Typical Gate to Drain Charge (nC)1.7
Current - Continuous Drain (Id) @ 25°C6.5A
HTSUS8541.21.0095
PackageTape & Reel (TR)
Typical Gate Charge @ Vgs (nC)[email protected]
Typical Input Capacitance @ Vds (pF)650@10V
Maximum Power Dissipation on PCB @ TC=25°C (W)1600
CategoryPower MOSFET
PCB changed8
HTSCOMPONENTS
Number of Elements per Chip2
Typical Reverse Recovery Time (ns)15
ECCN (US)EAR99
Maximum Power Dissipation (mW)2000
Supplier Device Package8-SOIC
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Typical Fall Time (ns)4
Process TechnologyPowerTrench
Package Height1.5(Max)
Typical Gate to Source Charge (nC)1.2
Maximum Positive Gate Source Voltage (V)10
Mfronsemi
RoHS StatusROHS3 Compliant
Typical Gate Threshold Voltage (V)1
FET FeatureLogic Level Gate
Maximum Gate Source Voltage (V)±10
Typical Gate Plateau Voltage (V)1.7
Package Length4.9
Typical Gate Charge @ 10V (nC)6.2
Maximum Diode Forward Voltage (V)1.3
SeriesPowerTrench®
Typical Diode Forward Voltage (V)0.73
Operating Junction Temperature (°C)-55 to 150
Typical Output Capacitance (pF)650@10V
Power - Max900mW
Part StatusActive
Maximum Gate Threshold Voltage (V)1.5
Package Width3.9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)135
Base Product NumberFDS9926

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