| Configuration | 2 N-Channel (Dual) | |
| Typical Turn-Off Delay Time (ns) | 15 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V | |
| Typical Rise Time (ns) | 9 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 8 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 20V | |
| Supplier Package | SOIC | |
| Maximum IDSS (uA) | 1 | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant | |
| Maximum Continuous Drain Current (A) | 6.5 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 | |
| Maximum Drain Source Voltage (V) | 20 | |
| Maximum Drain Source Resistance (mOhm) | [email protected] | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Standard Package Name | SO | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Typical Reverse Recovery Charge (nC) | 5 | |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.5 | |
| Pin Count | 8 | |
| Mounting | Surface Mount | |
| Minimum Gate Threshold Voltage (V) | 0.6 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 85@10V | |
| Lead Shape | Gull-wing | |
| Typical Gate to Drain Charge (nC) | 1.7 | |
| Current - Continuous Drain (Id) @ 25°C | 6.5A | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Reel (TR) | |
| Typical Gate Charge @ Vgs (nC) | [email protected] | |
| Typical Input Capacitance @ Vds (pF) | 650@10V | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1600 | |
| Category | Power MOSFET | |
| PCB changed | 8 | |
| HTS | COMPONENTS | |
| Number of Elements per Chip | 2 | |
| Typical Reverse Recovery Time (ns) | 15 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 2000 | |
| Supplier Device Package | 8-SOIC | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Typical Fall Time (ns) | 4 | |
| Process Technology | PowerTrench | |
| Package Height | 1.5(Max) | |
| Typical Gate to Source Charge (nC) | 1.2 | |
| Maximum Positive Gate Source Voltage (V) | 10 | |
| Mfr | onsemi | |
| RoHS Status | ROHS3 Compliant | |
| Typical Gate Threshold Voltage (V) | 1 | |
| FET Feature | Logic Level Gate | |
| Maximum Gate Source Voltage (V) | ±10 | |
| Typical Gate Plateau Voltage (V) | 1.7 | |
| Package Length | 4.9 | |
| Typical Gate Charge @ 10V (nC) | 6.2 | |
| Maximum Diode Forward Voltage (V) | 1.3 | |
| Series | PowerTrench® | |
| Typical Diode Forward Voltage (V) | 0.73 | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Typical Output Capacitance (pF) | 650@10V | |
| Power - Max | 900mW | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 1.5 | |
| Package Width | 3.9 | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 | |
| Base Product Number | FDS9926 |
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