FQA46N15 (In Stock:436)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FQA46N15 Description
N-Channel 150 V 50A (Tc) 250W (Tc) Through Hole TO-3P
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 210 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
| Typical Rise Time (ns) | 320 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 35 | |
| Product Status | Obsolete | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Supplier Package | TO-3P | |
| Maximum IDSS (uA) | 1 | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 50 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Maximum Drain Source Voltage (V) | 150 | |
| Maximum Drain Source Resistance (mOhm) | 42@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 85@10V | |
| Typical Input Capacitance @ Vds (pF) | 2500@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.29.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 250000 | |
| Supplier Device Package | TO-3P | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Power Dissipation (Max) | 250W (Tc) | |
| Typical Fall Time (ns) | 200 | |
| Process Technology | DMOS | |
| Package Height | 18.9(Max) | |
| Mfr | onsemi | |
| Vgs (Max) | ±25V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±25 | |
| Package Length | 16.2(Max) | |
| Typical Gate Charge @ 10V (nC) | 85 | |
| Series | QFET® | |
| Tab | Tab | |
| Part Status | Obsolete | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Package Width | 5(Max) | |
| Base Product Number | FQA46 |
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