FQP17P06 (In Stock:1480)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FQP17P06
278-FQP17P06
MOSFET P-CH 60V 17A TO220-3
1+:$0.88672
10+:$0.84239
100+:$0.81071
1000+:$0.78388
InStock Quantity: 1480

FQP17P06 Description

P-Channel 60 V 17A (Tc) 79W (Tc) Through Hole TO-220-3

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)22
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Typical Rise Time (ns)100
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)13
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)60 V
Supplier PackageTO-220
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeP
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)17
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Drain Source Voltage (V)60
Maximum Drain Source Resistance (mOhm)120@10V
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs120mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C17A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Typical Gate Charge @ Vgs (nC)21@10V
Typical Input Capacitance @ Vds (pF)690@25V
CategoryPower MOSFET
PCB changed3
HTS8541.29.00.95
FET TypeP-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)79000
Supplier Device PackageTO-220-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)175
Power Dissipation (Max)79W (Tc)
Typical Fall Time (ns)60
Process TechnologyDMOS
Package Height9.4(Max)
Mfronsemi
Vgs (Max)±25V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±25
Package Length10.67(Max)
Typical Gate Charge @ 10V (nC)21
SeriesQFET®
TabTab
Part StatusActive
Package Width4.7(Max)
Base Product NumberFQP17

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