FQP27P06 (In Stock:6886)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
1+:$0.99885
10+:$0.94891
100+:$0.91323
1000+:$0.88300
FQP27P06 Description
P-Channel 60 V 27A (Tc) 120W (Tc) Through Hole TO-220-3
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 30 | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | |
| Typical Rise Time (ns) | 185 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 18 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | TO-220 | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | P | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 27 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 70@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 13.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 33@10V | |
| Typical Input Capacitance @ Vds (pF) | 1100@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| FET Type | P-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 120000 | |
| Supplier Device Package | TO-220-3 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Power Dissipation (Max) | 120W (Tc) | |
| Typical Fall Time (ns) | 90 | |
| Process Technology | DMOS | |
| Package Height | 9.4(Max) | |
| Mfr | onsemi | |
| Vgs (Max) | ±25V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±25 | |
| Package Length | 10.67(Max) | |
| Typical Gate Charge @ 10V (nC) | 33 | |
| Series | QFET® | |
| Tab | Tab | |
| Part Status | Active | |
| Package Width | 4.7(Max) | |
| Base Product Number | FQP27 |
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