FQPF13N50C

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FQPF13N50C
278-FQPF13N50C
MOSFET N-CH 500V 13A TO220F

FQPF13N50C Description

### FQPF13N50C Description The FQPF13N50C is a high-performance N-Channel MOSFET designed and manufactured by onsemi. This device is part of the QFET® series and is packaged in a TO220F tube. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at 25°C, the FQPF13N50C is suitable for a wide range of applications requiring high voltage and current capabilities. The device is also compliant with the REACH and RoHS3 standards, ensuring environmental safety and regulatory compliance. ### FQPF13N50C Features - **High Voltage and Current Ratings**: The FQPF13N50C offers a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at 25°C, making it suitable for high-power applications. - **Low On-Resistance**: The device features a low on-resistance (Rds On) of 480mΩ at 6.5A and 10V, ensuring efficient power dissipation and reduced power losses. - **Robust Gate Drive**: With a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4V at 250µA, the FQPF13N50C provides reliable and stable gate control. - **Low Input Capacitance**: The device has a low input capacitance (Ciss) of 2055 pF at 25V, reducing the charging time and improving switching performance. - **High Power Dissipation**: The FQPF13N50C can dissipate up to 48W of power, making it suitable for high-power applications. - **Environmental Compliance**: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance. ### FQPF13N50C Applications The FQPF13N50C is ideal for a variety of applications where high voltage and current capabilities are required. Some specific use cases include: 1. **Power Supplies**: The high voltage and current ratings make the FQPF13N50C suitable for power supply applications, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). 2. **Motor Control**: The device's high voltage and current capabilities, along with its low on-resistance, make it ideal for motor control applications, such as electric vehicles (EVs) and industrial motor drives. 3. **Industrial Automation**: The FQPF13N50C can be used in industrial automation applications, such as robotic arms and conveyor systems, where high voltage and current capabilities are required. 4. **Renewable Energy**: The device's high voltage and current ratings make it suitable for renewable energy applications, such as solar inverters and wind turbines. ### Conclusion of FQPF13N50C The FQPF13N50C is a high-performance N-Channel MOSFET from onsemi, offering a combination of high voltage, current, and power dissipation capabilities. Its low on-resistance, robust gate drive, and low input capacitance make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and renewable energy. Although the device is now considered obsolete, its unique features and advantages make it a valuable option for applications where high performance and reliability are critical.

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)130
Input Capacitance (Ciss) (Max) @ Vds2055 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Typical Rise Time (ns)100
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)25
Product StatusObsolete
AutomotiveNo
Drain to Source Voltage (Vdss)500 V
Supplier PackageTO-220FP
Package / CaseTO-220-3 Full Pack
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)13
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)500
Maximum Drain Source Resistance (mOhm)480@10V
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C13A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Typical Gate Charge @ Vgs (nC)43@10V
Typical Input Capacitance @ Vds (pF)1580@25V
CategoryPower MOSFET
PCB changed3
HTSCOMPONENTS
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)48000
Supplier Device PackageTO-220F-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)48W (Tc)
Typical Fall Time (ns)100
Package Height15.87
Mfronsemi
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±30
SVHC Exceeds ThresholdYes
Package Length10.16
Typical Gate Charge @ 10V (nC)43
SeriesQFET®
TabTab
Part StatusObsolete
Package Width4.7
Base Product NumberFQPF1

Shopping Guide

Easy Shopping, Convenient Payment, Fast Delivery

Payment Methods

We support multiple payment methods:

  • paypal
  • visa
  • amex
  • oo

Customers are responsible for shipping costs, bank charges, customs duties and taxes.

Dispatch Time

Shipments are made once a day around 5pm, excluding Sundays.

Estimated Delivery

Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.

Delivery Methods

We provide the following international delivery services:

  • FedEX
  • DHL
  • UPS
  • TNT

If you have any questions, please contact our customer service team for assistance