FQPF5N60C (In Stock:1)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FQPF5N60C
278-FQPF5N60C
MOSFET N-CH 600V 4.5A TO220F

FQPF5N60C Description

N-Channel 600 V 4.5A (Tc) 33W (Tc) Through Hole TO-220F-3

Technical specifications

ConfigurationSingle
Typical Turn-Off Delay Time (ns)38
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Typical Rise Time (ns)42
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)10
Product StatusObsolete
AutomotiveNo
Drain to Source Voltage (Vdss)600 V
Supplier PackageTO-220FP
Package / CaseTO-220-3 Full Pack
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)4.5
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)600
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Maximum Drain Source Resistance (MOhm)2500@10V
Typical Gate Charge @ Vgs (nC)15@10V
Typical Input Capacitance @ Vds (pF)515@25V
CategoryPower MOSFET
PCB changed3
HTS8541.29.00.95
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)33000
Supplier Device PackageTO-220F-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)33W (Tc)
Typical Fall Time (ns)46
Process TechnologyDMOS
Package Height15.87
Mfronsemi
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±30
SVHC Exceeds ThresholdYes
Package Length10.16
Typical Gate Charge @ 10V (nC)15
SeriesQFET®
TabTab
Part StatusObsolete
Package Width4.7
Base Product NumberFQPF5

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