NJW21194G (In Stock:1034)

Single Bipolar Transistors
Manufacturer:
Mfr. Part #:
onzuu Part #:
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NJW21194G
276-NJW21194G
TRANS NPN 250V 16A TO3P-3L
1+:$2.41592
10+:$2.06863
100+:$1.94784
1000+:$1.86875
InStock Quantity: 1034

NJW21194G Description

### NJW21194G Description The NJW21194G is a high-performance NPN transistor from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector current of 16 A and a collector-emitter breakdown voltage of 250 V, this device delivers exceptional performance in demanding power electronics applications. The NJW21194G features a 4 MHz transition frequency, making it suitable for high-speed switching applications. Its low saturation voltage of 4 V at 3.2 A and 16 A ensures high efficiency in power management systems. ### NJW21194G Features - **High Power Handling**: Capable of handling up to 200 W of power, the NJW21194G is ideal for high-power applications. - **Low Saturation Voltage**: The low Vce saturation of 4 V at 3.2 A and 16 A contributes to high efficiency in power management systems. - **High Current Handling**: With a maximum collector current of 16 A, the NJW21194G is suitable for applications requiring high current. - **High Transition Frequency**: The 4 MHz transition frequency makes it suitable for high-speed switching applications. - **Through-Hole Mounting**: The through-hole mounting type provides a reliable and robust connection in various electronic circuits. - **Compliance**: The NJW21194G is compliant with RoHS3 standards, making it an environmentally friendly choice. ### NJW21194G Applications The NJW21194G is ideal for a variety of applications, including: 1. **Power Amplifiers**: Due to its high power handling and low saturation voltage, the NJW21194G is well-suited for power amplifiers in audio systems. 2. **Switching Regulators**: The high transition frequency and low saturation voltage make it an excellent choice for switching regulators in power supply systems. 3. **Motor Control**: The high current handling capability and robustness of the NJW21194G make it suitable for motor control applications in industrial automation. 4. **RF Power Amplifiers**: The 4 MHz transition frequency allows the NJW21194G to be used in RF power amplifiers for communication systems. ### Conclusion of NJW21194G The NJW21194G from onsemi is a versatile and high-performance NPN transistor that offers a combination of high power handling, low saturation voltage, and high transition frequency. Its through-hole mounting type ensures a reliable connection in various electronic circuits, while its compliance with RoHS3 standards makes it an environmentally friendly choice. With its unique features and advantages, the NJW21194G is an ideal choice for power amplifiers, switching regulators, motor control, and RF power amplifiers in various industries.

Technical specifications

Unit Weight0.238311 oz
ConfigurationSingle
PPAPNo
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)250 V
RoHSRoHS Compliant By Exemption
AutomotiveNo
Supplier PackageTO-3P
Transistor TypeNPN
Package / CaseTO-3P-3, SC-65-3
TechnologySi
REACH StatusREACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)[email protected]@8A|[email protected]@16A
Collector- Base Voltage VCBO400 V
EU RoHSCompliant with Exemption
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Collector Base Voltage (V)400
Frequency - Transition4MHz
Current - Collector (Ic) (Max)16 A
ECCNEAR99
Maximum Emitter Base Voltage (V)5
Mounting TypeThrough Hole
Standard Package NameTO
Pin Count3
MountingThrough Hole
Lead ShapeThrough Hole
Collector- Emitter Voltage VCEO Max250 V
SVHCYes
HTSUS8541.29.0095
PackageTube
USHTS8541290095
CategoryBipolar Power
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)250
ECCN (US)EAR99
Maximum Power Dissipation (mW)200000
Supplier Device PackageTO-3P-3L
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)150
Maximum DC Collector Current16 A
Package Height18.7
Collector-Emitter Saturation Voltage1.4 V
Mfronsemi
Height18.7 mm
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min20
Width4.8 mm
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
Maximum Transition Frequency (MHz)4(Min)
SVHC Exceeds ThresholdYes
Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
MaterialSi
Transistor PolarityNPN
Package Length15.6
Minimum Operating Temperature- 65 C
Emitter- Base Voltage VEBO5 V
SeriesNJW21194
TypeNPN
Minimum DC Current Gain20@8A@5V
TabTab
Length15.6 mm
Maximum DC Collector Current (A)16
Gain Bandwidth Product fT4 MHz
Power - Max200 W
DC Current Gain hFE Max80
Part StatusActive
Current - Collector Cutoff (Max)100µA
Package Width4.8
Pd - Power Dissipation200 W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8A, 5V
Base Product NumberNJW21194

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