| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 20 V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Product Status | Obsolete | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Supplier Device Package | TO-220-3 | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Series | - | |
| Power Dissipation (Max) | 160W (Tc) | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | onsemi | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | |
| Vgs (Max) | ±20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Base Product Number | RFP40 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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