| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 32 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 20 V | |
| Typical Rise Time (ns) | 137 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 10 | |
| Product Status | Active | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | TO-220 | |
| Maximum IDSS (uA) | 1 | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 70 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 14@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 70A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Minimum Gate Threshold Voltage (V) | 2 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 206@25V | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 120@20V | |
| Typical Input Capacitance @ Vds (pF) | 2250@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 150000 | |
| Supplier Device Package | TO-220-3 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Power Dissipation (Max) | 150W (Tc) | |
| Typical Fall Time (ns) | 24 | |
| Process Technology | MegaFET | |
| Package Height | 9.4(Max) | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Mfr | onsemi | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Material | Si | |
| Package Length | 10.67(Max) | |
| Typical Gate Charge @ 10V (nC) | 65 | |
| Maximum Diode Forward Voltage (V) | 1.5 | |
| Series | - | |
| Operating Junction Temperature (°C) | -55 to 175 | |
| Typical Output Capacitance (pF) | 792 | |
| Tab | Tab | |
| Part Status | Active | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Package Width | 4.7(Max) | |
| Base Product Number | RFP70 |
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