SI4542DY

FET, MOSFET Arrays
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
SI4542DY
289-SI4542DY
MOSFET N/P-CH 30V 6A 8SOIC

Technical specifications

ConfigurationN and P-Channel
Typical Turn-Off Delay Time (ns)18@N Channel|47@P Channel
Input Capacitance (Ciss) (Max) @ Vds830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Typical Rise Time (ns)10@N Channel|22@P Channel
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)6@N Channel|13@P Channel
Product StatusObsolete
AutomotiveNo
Drain to Source Voltage (Vdss)30V
Supplier PackageSOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN|P
EU RoHSCompliant
Maximum Continuous Drain Current (A)6
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Drain Source Voltage (V)30
Maximum Drain Source Resistance (mOhm)28@10V@N Channel|32@10V@P Channel
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSO
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Pin Count8
MountingSurface Mount
Lead ShapeGull-wing
Current - Continuous Drain (Id) @ 25°C6A
HTSUS8541.29.0095
PackageTape & Reel (TR)
Typical Gate Charge @ Vgs (nC)9@5V@N Channel|15@5V@P Channel
Typical Input Capacitance @ Vds (pF)830@15V@N Channel|1540@15V@P Channel
CategoryPower MOSFET
PCB changed8
HTS8541.29.00.95
Number of Elements per Chip2
ECCN (US)EAR99
Maximum Power Dissipation (mW)2000
Supplier Device Package8-SOIC
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)175
Typical Fall Time (ns)5@N Channel|18@P Channel
Process TechnologyTMOS
Package Height1.5(Max)
Mfronsemi
RoHS StatusROHS3 Compliant
FET Feature-
Maximum Gate Source Voltage (V)±20
Package Length4.9
SeriesPowerTrench®
Power - Max1W
Part StatusObsolete
Package Width3.9
Base Product NumberSI4542

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