UNR421100A
Single, Pre-Biased Bipolar Transistors Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
UNR421100A
292-UNR421100A
TRANS PREBIAS NPN 50V NS-B1
UNR421100A Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
Technical specifications
| Frequency - Transition | 150 MHz | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Resistor - Base (R1) | 10 kOhms | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Product Status | Obsolete | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Supplier Device Package | NS-B1 | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Package / Case | 3-SIP | |
| Power - Max | 300 mW | |
| Mfr | Panasonic Electronic Components | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Current - Collector Cutoff (Max) | 500nA | |
| HTSUS | 8541.21.0075 | |
| Package | Tape & Box (TB) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | |
| Base Product Number | UNR421 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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