UNR511000L

Single, Pre-Biased Bipolar Transistors
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UNR511000L
292-UNR511000L
TRANS PREBIAS PNP 50V SMINI3

UNR511000L Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 150 mW Surface Mount SMini3-G1

Technical specifications

Frequency - Transition80 MHz
Current - Collector (Ic) (Max)100 mA
Resistor - Base (R1)47 kOhms
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
ECCNEAR99
Mounting TypeSurface Mount
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)50 V
Supplier Device PackageSMini3-G1
Series-
Transistor TypePNP - Pre-Biased
Package / CaseSC-70, SOT-323
Power - Max150 mW
MfrPanasonic Electronic Components
Current - Collector Cutoff (Max)500nA
HTSUS8541.21.0095
PackageTape & Reel (TR)
RoHS StatusRoHS non-compliant
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Base Product NumberUNR511
Moisture Sensitivity Level (MSL)1 (Unlimited)

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