2SB1151-S1-AZ (In Stock:1915)
Single Bipolar Transistors Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
2SB1151-S1-AZ
276-2SB1151-S1-AZ
POWER BIPOLAR TRANSISTOR, PNP
2SB1151-S1-AZ Description
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126
Technical specifications
| Operating Temperature | 150°C (TJ) | |
| Frequency - Transition | - | |
| Current - Collector (Ic) (Max) | 5 A | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A | |
| ECCN | EAR99 | |
| Grade | - | |
| Mounting Type | Through Hole | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Supplier Device Package | TO-126 | |
| Series | - | |
| Qualification | - | |
| Transistor Type | PNP | |
| Package / Case | TO-225AA, TO-126-3 | |
| Power - Max | 1.3 W | |
| REACH Status | Vendor Undefined | |
| Mfr | Renesas Electronics Corporation | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| RoHS Status | Not applicable | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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