2SJ162-E

Single FETs, MOSFETs
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2SJ162-E Description

P-Channel 160 V 7A (Ta) 100W (Tc) Through Hole TO-3P

Technical specifications

Operating Temperature150°C (TJ)
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-3P
Drain to Source Voltage (Vdss)160 V
Series-
Power Dissipation (Max)100W (Tc)
Package / CaseTO-3P-3, SC-65-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Affected
MfrRenesas Electronics Corporation
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Vgs (Max)±15V
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

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