2SJ358C-T1-AZ

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Renesas Electronics Corporation
2SJ358C-T1-AZ
278-2SJ358C-T1-AZ
2SJ358C-T1-AZ - P-CHANNEL MOS FE

2SJ358C-T1-AZ Description

Technical specifications

Operating Temperature150°C
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
ECCNEAR99
Mounting TypeSurface Mount
Product StatusObsolete
Rds On (Max) @ Id, Vgs143mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageMP-2
Drain to Source Voltage (Vdss)60 V
Series-
Power Dissipation (Max)2W (Ta)
Package / CaseTO-243AA
TechnologyMOSFET (Metal Oxide)
REACH StatusVendor Undefined
MfrRenesas
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
HTSUS8541.21.0075
PackageBulk
RoHS StatusRoHS non-compliant