2SJ529L06-E

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Renesas Electronics Corporation
2SJ529L06-E
278-2SJ529L06-E
2SJ529L06 - P-CHANNEL POWER MOSF

2SJ529L06-E Description

Technical specifications

Operating Temperature150°C
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 10 V
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK(L)-(2)
Drain to Source Voltage (Vdss)60 V
Series-
Power Dissipation (Max)20W (Tc)
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrRenesas
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
HTSUS8541.29.0095
PackageBulk
RoHS StatusRoHS non-compliant