| Operating Temperature | 150°C | |
| FET Feature | - | |
| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Product Status | Obsolete | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 23A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Supplier Device Package | TO-263 | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Series | - | |
| Power Dissipation (Max) | 1.5W (Ta), 70W (Tc) | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Renesas | |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | |
| Vgs (Max) | ±20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| RoHS Status | RoHS non-compliant |
