ISL6612ECBZ-T

Gate Drivers ICs
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ISL6612ECBZ-T Description

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP

Technical specifications

Rise / Fall Time (Typ)26ns, 18ns
Gate TypeN-Channel MOSFET
Product StatusObsolete
Supplier Device Package8-SOIC-EP
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Supply10.8V ~ 13.2V
REACH StatusREACH Unaffected
MfrRenesas Electronics Corporation
Channel TypeSynchronous
High Side Voltage - Max (Bootstrap)36 V
RoHS StatusROHS3 Compliant
Logic Voltage - VIL, VIH-
Moisture Sensitivity Level (MSL)3 (168 Hours)
Operating Temperature0°C ~ 125°C (TJ)
Input TypeNon-Inverting
Driven ConfigurationHalf-Bridge
ECCNEAR99
Number of Drivers2
Mounting TypeSurface Mount
Current - Peak Output (Source, Sink)1.25A, 2A
Series-
HTSUS8542.39.0001
PackageTape & Reel (TR)
Base Product NumberISL6612

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