RJK6026DPE-00#J3

Single FETs, MOSFETs
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Description:

RJK6026DPE-00#J3 Description

N-Channel 600 V 5A (Ta) 62.5W (Tc) Surface Mount LDPAK

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Product StatusActive
Supplier Device PackageLDPAK
Drain to Source Voltage (Vdss)600 V
Power Dissipation (Max)62.5W (Tc)
Package / CaseSC-83
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Affected
MfrRenesas Electronics Corporation
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id-
Series-
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberRJK6026

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