RJM0603JSC-00#12

FET, MOSFET Arrays
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RJM0603JSC-00#12 Description

Mosfet Array 60V 20A 54W Surface Mount 20-HSOP

Technical specifications

Configuration3 N and 3 P-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Product StatusActive
Supplier Device Package20-HSOP
Drain to Source Voltage (Vdss)60V
Package / Case20-SOIC (0.433", 11.00mm Width) Exposed Pad
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrRenesas Electronics Corporation
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature175°C
FET FeatureLogic Level Gate, 4.5V Drive
ECCNEAR99
GradeAutomotive
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Series-
QualificationAEC-Q101
Power - Max54W
Current - Continuous Drain (Id) @ 25°C20A
HTSUS8541.29.0095
PackageTray
Base Product NumberRJM0603

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